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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-45SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB G1dB IDS G add IM3 CONDITIONS UNIT dBm dB A dB % dBc MIN. 46.0 5.0 -42 TYP. MAX. 46.5 6.0 9.6 35 -45 10.8 0.8 VDS=10V f = 7.7 to 8.5GHz Two-Tone Test Po=35.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Tch C 100 Recommended Gate Resistance(Rg): 28 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 11.0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V IGS= -500A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-45SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 20 125 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM7785-45SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 48 IDS9.6A Pin=40.5dBm 47 46 45 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=8.5GHz VDS=10V 47 IDS9.6A 80 Pout 70 60 50 Pout(dBm) 45 43 40 add 41 30 20 10 34 36 38 40 42 44 Pin(dBm) 3 add(%) TIM7785-45SL Power Dissipation(PT) vs. Case Temperature(Tc) 140 120 PT(W) 100 80 60 40 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS9.6A -20 freq.=8.5GHz f=5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level 4 |
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